An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K
Identifieur interne : 014381 ( Main/Repository ); précédent : 014380; suivant : 014382An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K
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Abstract
A high-performance n-type AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector grown on InP with photovoltaic (PV) and photoconductive (PC) dual-mode operation has been fabricated and characterized in this work. The PV and PC detection scheme employs the intersubband transition from the ground bound state to the quasibound excited state in the double-barrier well. The peak responsivities for the PV mode at zero bias and PC mode at Vb=-3V were found to be 19 and 159 mA/W at λp=3.4μm and T=77K, respectively. The corresponding background limited performance (BLIP) detectivity (DBLIP*) was given by 8.9×1010cmHz1/2/W for the PV mode and non-BLIP D*=5.36×1010cmHz1/2/W for the PC mode. This device is capable of operating up to 205 K with good performance characteristics. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K</title><author><name sortKey="Lee, Jung Hee" uniqKey="Lee J">Jung Hee Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Advanced Device Technology Inc., Salem, New Hampshire 03079</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Hampshire</region></placeName><wicri:cityArea>Advanced Device Technology Inc., Salem</wicri:cityArea></affiliation></author><author><name sortKey="Chiang, Jung Chi" uniqKey="Chiang J">Jung-Chi Chiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Li, Sheng S" uniqKey="Li S">Sheng S. Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Kannam, P J" uniqKey="Kannam P">P. J. Kannam</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0052649</idno><date when="1999-02-01">1999-02-01</date><idno type="stanalyst">PASCAL 99-0052649 AIP</idno><idno type="RBID">Pascal:99-0052649</idno><idno type="wicri:Area/Main/Corpus">015B49</idno><idno type="wicri:Area/Main/Repository">014381</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Bound state</term><term>Experimental study</term><term>Gallium arsenides</term><term>Ground states</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared detectors</term><term>Interface states</term><term>Photoconducting devices</term><term>Photodetectors</term><term>Photovoltaic effects</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560G</term><term>0757K</term><term>7320D</term><term>8530V</term><term>7361E</term><term>7240</term><term>Etude expérimentale</term><term>Détecteur IR</term><term>Photodétecteur</term><term>Puits quantique semiconducteur</term><term>Semiconducteur III-V</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium arséniure</term><term>Dispositif photoconducteur</term><term>Effet photovoltaïque</term><term>Etat fondamental</term><term>Etat interface</term><term>Etat lié</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A high-performance n-type AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector grown on InP with photovoltaic (PV) and photoconductive (PC) dual-mode operation has been fabricated and characterized in this work. The PV and PC detection scheme employs the intersubband transition from the ground bound state to the quasibound excited state in the double-barrier well. The peak responsivities for the PV mode at zero bias and PC mode at V<sub>b</sub>=-3V were found to be 19 and 159 mA/W at λ<sub>p</sub>=3.4μm and T=77K, respectively. The corresponding background limited performance (BLIP) detectivity (D<sub>BLIP</sub><sup>*</sup>) was given by 8.9×10<sup>10</sup>cmHz<sup>1/2</sup>/W for the PV mode and non-BLIP D<sup>*</sup>=5.36×10<sup>10</sup>cmHz<sup>1/2</sup>/W for the PC mode. This device is capable of operating up to 205 K with good performance characteristics. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>74</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K</s1></fA08><fA11 i1="01" i2="1"><s1>LEE (Jung Hee)</s1></fA11><fA11 i1="02" i2="1"><s1>CHIANG (Jung-Chi)</s1></fA11><fA11 i1="03" i2="1"><s1>LI (Sheng S.)</s1></fA11><fA11 i1="04" i2="1"><s1>KANNAM (P. J.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Advanced Device Technology Inc., Salem, New Hampshire 03079</s1></fA14><fA20><s1>765-767</s1></fA20><fA21><s1>1999-02-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0052649</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A high-performance n-type AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector grown on InP with photovoltaic (PV) and photoconductive (PC) dual-mode operation has been fabricated and characterized in this work. The PV and PC detection scheme employs the intersubband transition from the ground bound state to the quasibound excited state in the double-barrier well. The peak responsivities for the PV mode at zero bias and PC mode at V<sub>b</sub>=-3V were found to be 19 and 159 mA/W at λ<sub>p</sub>=3.4μm and T=77K, respectively. The corresponding background limited performance (BLIP) detectivity (D<sub>BLIP</sub><sup>*</sup>) was given by 8.9×10<sup>10</sup>cmHz<sup>1/2</sup>/W for the PV mode and non-BLIP D<sup>*</sup>=5.36×10<sup>10</sup>cmHz<sup>1/2</sup>/W for the PC mode. 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